Channeling in Si Overlaid with Al and Au Films
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.718/fulltext
Reference21 articles.
1. Channeling Studies in Diamond-Type Lattices
2. Defect studies in crystals by means of channeling
3. Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals
4. Analysis of disorder distributions in boron implanted silicon
5. Ion‐Channeling Studies of Epitaxial Layers
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1. Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum;Applied Surface Science;1999-01
2. Two‐dimensional distributions of ions implanted in channeling and random directions of Si single crystals;Journal of Applied Physics;1993-08-15
3. Radiation damage in ReSi2by a MeV4He beam;Applied Physics Letters;1990-10-15
4. Effect of thin amorphous layers on channeling in diamond;Physical Review B;1989-12-01
5. Analysis of molecular‐beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling;Journal of Applied Physics;1987-12
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