Top-gated field-effect transistor and rectifying diode operation of core-shell structured GaP nanowire devices-Reference-Cited by-同舟云学术

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Top-gated field-effect transistor and rectifying diode operation of core-shell structured GaP nanowire devices

Published:2005-04-27 Issue:15 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kim Byoung-Kye,Kim Ju-Jin,Lee Jeong-O,Kong Ki-jeong,Seo Han Jong,Lee Cheol Jin

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.153313/fulltext

Reference20 articles.

1. Room-temperature transistor based on a single carbon nanotube

2. Logic Circuits with Carbon Nanotube Transistors

3. Ballistic carbon nanotube field-effect transistors

4. Doping and Electrical Transport in Silicon Nanowires

5. Logic Gates and Computation from Assembled Nanowire Building Blocks

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