Self-energy shifts in heavily doped, polar semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.4878/fulltext
Reference21 articles.
1. Band-gap narrowing in heavily doped many-valley semiconductors
2. Band-gap shifts in heavily dopedn-type GaAs
3. Band-gap shifts in heavilyp-type doped semiconductors of the zinc-blende and diamond type
4. Polarized hot-electron photoluminescence in highly doped GaAs
5. Heavily doped semiconductors and devices
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