SiC film formation and growth by the thermal reaction of aC60film adsorbed on a Si(111)-(7×7) surface: Bonding nature ofC60molecules and SiC-film surface phonons-Reference-Cited by-同舟云学术

SiC film formation and growth by the thermal reaction of aC60film adsorbed on a Si(111)-(7×7) surface: Bonding nature ofC60molecules and SiC-film surface phonons

Published:1998-04-15 Issue:15 Volume:57 Page:9003-9014
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sakamoto Kazuyuki,Suzuki Toshinao,Harada Masashi,Wakita Takanori,Suto Shozo,Kasuya Atsuo

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.9003/fulltext

Reference52 articles.

1. High resolution electron energy loss spectroscopy of epitaxial films of C60 grown on GaSe

2. Scanning Tunneling Microscopy of C60on the Si(111)7×7 Surface

3. Observation of C60cage opening on Si(111)‐(7×7)

4. C60 growth on Si(100), GaSe(0001) and GeS(001)

5. Double domain solidC60on Si(111)7×7

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