C60 growth on Si(100), GaSe(0001) and GeS(001)-Reference-Cited by-同舟云学术

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C60 growth on Si(100), GaSe(0001) and GeS(001)

Published:1993-03 Issue:3 Volume:56 Page:175-183
ISSN:0947-8396
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Gensterblum G.,Yu L. -M.,Pireaux J. -J.,Thiry P. A.,Caudano R.,Themlin J. -M.,Bouzidi S.,Coletti F.,Debever J. -M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00539471.pdf

Reference31 articles.

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2. P.A. Heiney, J.E. Fischer, A.R. McGhie, W.J. Romanow, A.M. Denenstein, J.P. McCauley, A.B. Smith: Phys. Rev. Lett. 66, 2911 (1991)

3. D.A. Neumann, J.R.D. Copley, R.L. Cappelletti, W.A. Kamitakahara, R.M. Lindstrom, K.M. Creegan, D.M. Cox, W.J. Romanow, N. Coustel, J.P. McCauley, N.C. Maliszewskyj, J.E. Fischer, A.B. Smith: Phys. Rev. Lett. 67, 3808 (1991)

4. F. Negri, G. Orlandi, F. Zerbetto: Chem Phys. Lett. 190, 174 (1992)

5. D.S. Bethune, G. Meijer, W.C. Tang, H.J. Rosen, W.G. Golden, H. Seki, C.A. Brown, M.S. Devries: Chem. Phys. Lett. 179, 181 (1991)

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