Interfacial stress in strained-ultrathin-layer (InAs)2/(GaAs)1superlattice
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1463/fulltext
Reference19 articles.
1. Electronic and vibronic structure of the (GaAs)1(AlAs)1superlattice
2. Phonon spectra of ultrathin GaAs/AlAs superlattices: Anab initiocalculation
3. Raman scattering from GexSi1−x/Si strained‐layer superlattices
4. Raman study of GaAs‐InxAl1−xAs strained‐layer superlattices
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3. Phonons, Strains, and Pressure in Semiconductors;High Pressure in Semiconductor Physics II;1998
4. PHONON BEHAVIOR AND INTERFACIAL STRESS IN THE STRAINED (INAS)(M)/(GAAS)(N) ULTRATHIN SUPERLATTICES;J CRYST GROWTH;1995
5. Phonon behavior and interfacial stress in the strained (InAs)m/(GaAs)n ultrathin superlattices;Journal of Crystal Growth;1995-05
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