Cyclotron-resonance measurements onp-type strained-layerSi1−xGex/Si heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.13499/fulltext
Reference16 articles.
1. Strain reconstruction of the valence band in Ga1 − xInxSb/GaSb quantum wells
2. Valence band engineering in strained-layer structures
3. Modulation doping in GexSi1−x/Si strained layer heterostructures
4. High hole mobilities in a p-type modulation-doped Si/Si0.87Ge0.13/Si heterostructure
5. Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two‐dimensional hole gas
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1. Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields;Journal of Low Temperature Physics;2010-01-08
2. Weak localization, interaction effects, and the metallic phase inp-SiGe;Physical Review B;2002-03-14
3. Band-offset determination and excitons in SiGe/Si(001) quantum wells;Physical Review B;2000-08
4. SiGe heterostructures for FET applications;Journal of Physics D: Applied Physics;1998-06-21
5. The quantum Hall effect in a wide p-Ge1−x Six/Ge/p-Ge1−x Six potential well;Semiconductors;1998-06
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