Author:
Katnani A. D.,Chiaradia P.,Sang H. W.,Zurcher P.,Bauer R. S.
Publisher
American Physical Society (APS)
Cited by
43 articles.
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1. Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
2. In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09
3. Atomic and electronic structure of group-IV adsorbates on the GaAs(001)-(1×2) surface;Surface Science;2009-09
4. GaSb/GaAs quantum dot systems: in situ synchrotron radiation x-ray photoelectron spectroscopy study;Nanotechnology;2005-06-07
5. Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy;Physical Review B;2002-08-06