Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.085305/fulltext
Reference40 articles.
1. Ge–GaAs(110) interface formation
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1. Verification of Ge-on-insulator structure for a mid-infrared photonics platform;Optical Materials Express;2018-01-18
2. Theoretical study of the optical response of the adsorption of Sb on the GaAs(110) surface;physica status solidi (c);2008-06
3. Ge-induced(1×2)surface reconstruction on GaAs(001): A precursor to As segregation;Physical Review B;2008-05-09
4. Theoretical model for adsorption of Sb on the GaAs(110) surface;physica status solidi (c);2005-11-25
5. Reflection anisotropy spectroscopy;Reports on Progress in Physics;2005-05-05
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