Band-gap engineering of functional perovskites through quantum confinement and tunneling-Reference-Cited by-同舟云学术

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Band-gap engineering of functional perovskites through quantum confinement and tunneling

Published:2015-04-24 Issue:16 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Castelli Ivano E.,Pandey Mohnish,Thygesen Kristian S.,Jacobsen Karsten W.

Funder

Stanford University

U.S. Department of Energy

Det Frie Forskningsråd

Danish National Research Foundation

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.165309/fulltext

Reference26 articles.

1. Functional oxide interfaces

2. Quantum confinement in oxide quantum wells

3. Dimensional-Crossover-Driven Metal-Insulator Transition inSrVO3Ultrathin Films

4. Determination of the surface and interface phase shifts in metallic quantum well structures of perovskite oxides

5. Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide

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