Electron-tunneling operation of single-donor-atom transistors at elevated temperatures-Reference-Cited by-同舟云学术

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Electron-tunneling operation of single-donor-atom transistors at elevated temperatures

Published:2013-02-13 Issue:8 Volume:87 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hamid Earfan,Moraru Daniel,Kuzuya Youhei,Mizuno Takeshi,Anh Le The,Mizuta Hiroshi,Tabe Michiharu

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.87.085420/fulltext

Reference23 articles.

1. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

2. A silicon-based nuclear spin quantum computer

3. Enhancing semiconductor device performance using ordered dopant arrays

4. Theory of Donor States in Silicon

5. D- state in silicon

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport Spectroscopy of Donor/Quantum Dot Interactive System in Silicon Nano‐Transistors;Advanced Quantum Technologies;2024-04-24

2. Room Temperature Quantum Control of N‐Donor Electrons at Si/SiO₂ Interface;Advanced Quantum Technologies;2024-04-14

3. Nitrogen in silicon for room temperature single-electron tunneling devices;Applied Physics Letters;2023-02-20

4. Inelastic cotunneling in the Coulomb-blockade transport of donor-atom transistors;Journal of Vacuum Science & Technology B;2023-01-01

5. Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors;Nanomaterials;2022-12-13

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