Picosecond Raman scattering from photoexcited plasmas in InP with spatial and temporal resolution
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.2544/fulltext
Reference19 articles.
1. Direct Measurement of Hot-Electron Relaxation by Picosecond Spectroscopy
2. Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering
3. Raman spectroscopy of hot electron relaxation in GaAs
4. Time-resolved Raman spectra of photoexcited semiconductor plasma
5. Plasmon-phonon coupling effects in picosecond Raman scattering of nonequilibrium semiconductor plasma
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1. Raman Spectroscopy of Compound Semiconductors;Semiconductor Research;2012
2. Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study;Physical Review B;2009-10-27
3. (Ga,In)P: A standard alloy in the classification of phonon mode behavior;Physical Review B;2006-04-12
4. Ultrafast carrier dynamics in InP photonic crystals;Nanotechnology;2005-04-21
5. Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra;Applied Surface Science;2004-05
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