Raman spectroscopy of hot electron relaxation in GaAs-Reference-Cited by-同舟云学术

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Raman spectroscopy of hot electron relaxation in GaAs

Published:1985-11 Issue:1-3 Volume:134 Page:184-188
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Tsang J.C.,Kash J.A.,Jha S.S.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Light Scattering in Solids II,1982

2. Light Scattering in Solids IV;Arbstreiter,1984

3. Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution

4. Raman Spectroscopy of Thin Films on Semiconductors;Tsang,1984

5. Subpicosecond Time-Resolved Raman Spectroscopy of LO Phonons in GaAs

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot carriers relaxation in highly excited polar semiconductors: Hot phonons versus phonon–plasmon coupling;Journal of Applied Physics;2011-12

2. Studies of electron–phonon and phonon–phonon interactions in InN using ultrafast Raman spectroscopy;Journal of Physics: Condensed Matter;2009-04-01

3. Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy;SPIE Proceedings;2008-02-07

4. Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy;Journal of Physics: Condensed Matter;2007-05-15

5. Subpicosecond time-resolved Raman studies of LO phonons in GaN;SPIE Proceedings;2007-02-08

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