Self-compensation of intrinsic defects in the ternary semiconductorCuGaSe2-Reference-Cited by-同舟云学术

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Self-compensation of intrinsic defects in the ternary semiconductorCuGaSe2

Published:2004-01-30 Issue:4 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Schuler Steffen,Siebentritt Susanne,Nishiwaki Shiro,Rega Niklas,Beckmann Joerg,Brehme Stephan,Lux-Steiner Martha Ch.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.045210/fulltext

Reference40 articles.

1. Doping limits in II–VI compounds — Challenges, problems and solutions

2. Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfaces

3. A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds

4. Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” inn-Type III-V Semiconductors

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3. On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se₂;Solar RRL;2023-05-16

4. Electronic Structure of Chalcopyrite Surfaces for Photoelectrochemical Hydrogen Production;The Journal of Physical Chemistry C;2023-04-25

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