Phosphorus vacancy in InP: A negative-Ucenter
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.6381/fulltext
Reference19 articles.
1. Model for the Electronic Structure of Amorphous Semiconductors
2. Theory of the silicon vacancy: An Anderson negative-Usystem
3. Experimental evidence for a negative-Ucenter in gallium arsenide related to oxygen
4. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
5. Identification of the phosphor vacancy defect in electron irradiated p-type Inp
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