Identification of the phosphor vacancy defect in electron irradiated p-type Inp
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Identification of the Isolated Ga Vacancy in Electron-Irradiated GaP through EPR
2. H.J.v. Bardeleben & J.C. Bourgoin, to be published.
3. ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2
4. Submillimeter EPR evidence for the As antisite defect in GaAs
5. Electron paramagnetic resonance identification of the phosphorus antisite in electron‐irradiated InP
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3. The electrical and optical properties of InP irradiated with high integrated fluxes of neutrons;Semiconductors;2005-05
4. The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects;Semiconductors;2005
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