Tunneling spectroscopy of quantum dots using submicrometer-diameterAlxGa1−xAs-GaAs triple-barrier diodes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.2523/fulltext
Reference20 articles.
1. Zero-dimensional states and single electron charging in quantum dots
2. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
3. Resonant tunneling through one- and zero-dimensional states constricted byAlxGa1−xAs/GaAs/AlxGa1−xAs heterojunctions and high-resistance regions induced by focused Ga ion-beam implanation
4. Resonant tunneling of three-dimensional electrons into degenerate zero-dimensional levels
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1. Tunable resonant tunneling through a system of capacitively coupled double quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2009-02
2. Hydrogenic impurity in multilayered quantum wires;Journal of Applied Physics;2001-02-15
3. Experimental evidence of surface conduction in AlSb–InAs tunneling diodes;Journal of Applied Physics;1999-01-15
4. Resonant Delay in Tunnelling through Smooth Double and Triple Barriers;physica status solidi (b);1998-07
5. Diameter dependence of current–voltage characteristics of ultrasmall area AlSb–InAs resonant tunneling diodes with diameters down to 20 nm;Applied Physics Letters;1997-04-14
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