Resonant tunneling through one- and zero-dimensional states constricted byAlxGa1−xAs/GaAs/AlxGa1−xAs heterojunctions and high-resistance regions induced by focused Ga ion-beam implanation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.5459/fulltext
Reference7 articles.
1. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
2. Resonant tunneling in zero-dimensional nanostructures
3. Anharmonic oscillator model of a quantum dot nanostructure
4. Electrical Properties of Ga Ion Beam Implanted GaAs Epilayer
5. Electronic transport through very short and narrow channels constricted in GaAs by highly resistive Ga-implanted regions
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