Splitting of the excitonic peak in quantum wells with interfacial roughness
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.16186/fulltext
Reference25 articles.
1. Temperature‐dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growth
2. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
3. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
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