Electronic structure and impurity-limited electron mobility of silicon superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.1027/fulltext
Reference21 articles.
1. Theory of silicon superlattices: Electronic structure and enhanced mobility
2. Electron mobility enhancement in epitaxial multilayer Si‐Si1−xGexalloy films on (100) Si
3. The properties of Si/Si1-xGex films grown on Si substrates by chemical vapor deposition
4. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
5. Modulation doping in GexSi1−x/Si strained layer heterostructures
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