Electron drift mobility in a Si-Ge1−xSixquantum well at low temperatures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.3690/fulltext
Reference12 articles.
1. Strained layer superlattices
2. Two-dimensional electron gas properties of symmetrically strained Si/Si1−xGex quantum well structures
3. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature
4. Electron Mobility for a SiSi1−xGex Quantum Well: Acoustic Phonon Scattering Mechanism
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1. Transport properties of a quasi-two-dimensional electron gas in a SiGe/Si/SiGe quantum well including temperature and magnetic field effects;Superlattices and Microstructures;2013-12
2. Electron mobility in modulation-doped AlSb/InAs quantum wells;Journal of Applied Physics;2011-04
3. Scattering of electrons at impurity ions at low temperatures in a superlattice with doped quantum wells;Semiconductors;2003-09
4. High field transport in strained Si/GeSi double heterostructure: A Fokker–Planck approach;Journal of Applied Physics;2000-06
5. Si/SiGe Quantum-Well Electron Mobility. Main Scattering Mechanisms;physica status solidi (b);1995-09-01
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