Growth and photoluminescence of GaSb andGa1−xInxAsySb1−ygrown on GaSb substrates by liquid-phase electroepitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.1329/fulltext
Reference41 articles.
1. MOVPE growth of GaInAsSb
2. GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy
3. Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
4. Molecular beam epitaxial growth of In1−xGaxAs1−ySbylattice matched to GaSb
5. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
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