Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)-Reference-Cited by-同舟云学术

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Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)

Published:2004-01-23 Issue:4 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Rogero C.,Koitzsch C.,González M. E.,Aebi P.,Cerdá J.,Martín-Gago J. A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.045312/fulltext

Reference49 articles.

1. Contact reaction between Si and rare earth metals

2. Low Schottky barrier of rare‐earth silicide onn‐Si

3. Role of silicon vacancies in yttrium-disilicide compounds from ab initio calculations

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3. Structural, magnetic, and electronic properties of EuSi₂ thin films on the Si(111) surface;Physical Chemistry Chemical Physics;2022

4. Spectroscopic Analysis of Rare-Earth Silicide Structures on the Si(111) Surface;Materials;2021-07-23

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