Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverseXelectrons in GaAs/AlAs double-barrier structures under hydrostatic pressure-Reference-Cited by-同舟云学术

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverseXelectrons in GaAs/AlAs double-barrier structures under hydrostatic pressure

Published:1998-08-15 Issue:8 Volume:58 Page:4708-4712
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Smith J. M.,Klipstein P. C.,Grey R.,Hill G.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.4708/fulltext

Reference17 articles.

1. Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition

2. Observation by resonant tunneling of high-energy states in GaAs-Ga1−xAlxAs quantum wells

3. Perpendicular transport across (Al,Ga)As and the Γ to X transition

4. Observation of resonant tunneling through GaAs quantum well states confined by AlAsX‐point barriers

5. Resonant tunnelling between X-levels in a GaAs/AlAs/GaAs/AlAs/GaAs device above 13 kbar

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1. Spin splitting of X-valley-related donor impurity states in an AlAs barrier;Physical Review B;2005-05-23

2. Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions;Semiconductors;2005

3. Resonant tunneling of electrons through virtual interference states formed as a result of reflection from the boundary of strongly doped region of GaAs;Journal of Experimental and Theoretical Physics;2004-09

4. Resonant Γ-X tunneling in single-barrier GaAs/AlAs/GaAs heterostructures;Semiconductors;2004-04

5. Electronic state mixing in X x and X y valleys in AlAs/GaAs (001);Semiconductors;2001-07