Lattice parameter ofSi1−x−yGexCyalloys-Reference-Cited by-同舟云学术

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Lattice parameter ofSi1−x−yGexCyalloys

Published:2000-05-15 Issue:19 Volume:61 Page:13005-13013
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

De Salvador D.,Petrovich M.,Berti M.,Romanato F.,Napolitani E.,Drigo A.,Stangl J.,Zerlauth S.,Mühlberger M.,Schäffler F.,Bauer G.,Kelires P. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.13005/fulltext

Reference40 articles.

1. Optical band gap of the ternary semiconductor Si1−x−yGexCy

2. Theoretical investigation of random Si-C alloys

3. Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively StrainedSi1−x−yGexCyLayers on Si

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