Thermal quenching and retrapping effects in the photoluminescence ofInyGa1−yAs/GaAs/AlxGa1−xAs multiple-quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.2412/fulltext
Reference9 articles.
1. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells
2. Photoluminescence characterisation of InGaAs/GaAs quantum well structures
3. Photoluminescence study on undoped single quantum well pseudomorphic structures
4. Relations between theT 0 values of bulk and quantum-well GaAs
5. Well‐width dependence of the excitonic lifetime in strained III‐V quantum wells
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