Photoluminescence characterisation of InGaAs/GaAs quantum well structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/3/i=12/a=004/pdf
Reference24 articles.
1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
2. p‐channel, strained quantum well, field‐effect transistor
3. Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode
4. Nonlinear effects in coplanar GaAs/InGaAs strained‐layer superlattice directional couplers
5. Investigation of InGaAs-InP quantum wells by optical spectroscopy
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3. Temperature-dependent photoluminescence of the InAs-based and GaSb-based type-II superlattices;Infrared Physics & Technology;2018-08
4. Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy;Current Applied Physics;2016-12
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