Intraband and interband magneto-optics ofp-typeIn0.18Ga0.82As/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14124/fulltext
Reference49 articles.
1. Band structure engineering for maximal light-hole behaviour in strained quantum well systems
2. Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices
3. Cyclotron resonance of two‐dimensional holes in strained‐layer quantum well structure of (100)In0.20Ga0.80As/GaAs
4. Pressure dependence of light-hole transport in strained InGaAs/GaAs
5. Large valence‐band nonparabolicity and tailorable hole masses in strained‐layer superlattices
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