Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires
Author:
Funder
Japan Society for the Promotion of Science
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.155303/fulltext
Reference55 articles.
1. Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)
2. Multiple-gate SOI MOSFETs: device design guidelines
3. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
4. High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology*;Chinese Physics B;2021-07-01
2. Modulation of the carrier mobility enhancement in Si/Ge core–shell nanowires under different interface confinements;Physical Chemistry Chemical Physics;2018
3. Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls;Journal of the American Chemical Society;2017-10-25
4. Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model;Solid-State Electronics;2016-09
5. Analysis of high-field hole transport in germanium and silicon nanowires based on Boltzmann’s transport equation;IEEE Transactions on Nanotechnology;2016
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3