Tunneling magnetoresistance and induced domain structure inAl2O3-based junctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.11643/fulltext
Reference15 articles.
1. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions
2. Influence of barrier impurities on the magnetoresistance in ferromagnetic tunnel junctions
3. Rare events in quantum tunneling
4. Nanometric cartography of tunnel current in metal–oxide junctions
5. Large tunneling magnetoresistance enhancement by thermal anneal
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