Low-resistance magnetic tunnel junctions with anMgO−Al2O3composite tunnel barrier: Asymmetric transport characteristics and free electron modeling of a self-limited oxidation bilayer-Reference-Cited by-同舟云学术

Low-resistance magnetic tunnel junctions with anMgO−Al2O3composite tunnel barrier: Asymmetric transport characteristics and free electron modeling of a self-limited oxidation bilayer

Published:2006-03-24 Issue:10 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

de Buttet C.,Hehn M.,Montaigne F.,Tiusan C.,Malinowski G.,Schuhl A.,Snoeck E.,Zoll S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.104439/fulltext

Reference35 articles.

1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

2. Top-seeded melt growth of Y-Ba-Cu-O superconductor with multiseeding

3. Spin dependent electron tunneling between ferromagnetic films

4. Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)

5. Spin polarized tunneling in reactively sputtered tunnel junctions

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