Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers
Author:
Affiliation:
1. School of Physics
2. State Key Laboratory of Crystal Materials
3. Shandong University
4. Jinan 250100
5. China
Abstract
Tunneling rectification magnetoresistance is demonstrated in magnetic tunneling junctions with asymmetric barriers by combining rectification and tunneling magnetoresistance effects.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR04431C
Reference26 articles.
1. Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect
2. Spin Hall magnetoresistance inPt/Fe3O4thin films at room temperature
3. Spin-torque diode effect in magnetic tunnel junctions
4. Highly sensitive nanoscale spin-torque diode
5. Using giant magneto resistance stripes to efficiently generate direct voltage signals from alternating current excitations
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