Effect of seed layer thickness on the Ta crystalline phase and spin Hall angle
Author:
Affiliation:
1. Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi-502284, Telangana, India
2. Department of Physics, Indian Institute of Technology Hyderabad, Kandi-502284, Telangana, India
Abstract
Funder
Science and Engineering Research Board
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR06007D
Reference64 articles.
1. Current-induced spin orientation of electrons in semiconductors
2. Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface
3. Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance
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