Electron paramagnetic resonance properties ofn-type silicon in the intermediate impurity-concentration range
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.11.4184/fulltext
Reference48 articles.
1. Application of Electron Spin Resonance in Semiconductors
2. Electron-Spin-Resonance Measurements of the Spin Susceptibility of Heavily Dopedn-Type Silicon
3. Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped Silicon
4. Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Dopedn-Type Silicon. I. Metallic Samples
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