Vibrational properties of Si/Ge superlattices incorporating biatomic sheets of silicon and germanium
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.1685/fulltext
Reference23 articles.
1. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
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3. Optical window in strained‐layer Si/Ge microstructures
4. Direct-gap Si/Ge superlattices
5. Annealing effects in short period Si-Ge strained layer superlattices
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1. Multilayer Si/Ge thin films with quantum confinement effects for photovoltaic applications;Applied Surface Science;2014-03
2. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
3. Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution;Solid State Phenomena;1997-07
4. Transverse interplanar forces and phonon spectra of strained Si, Ge, and Si/Ge superlattices;Physical Review B;1996-03-01
5. Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure Defects, and Electronic Properties;Growth of Crystals;1996
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