Dynamics of carrier-capture processes inGaxIn1−xAs/GaAs near-surface quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.4657/fulltext
Reference14 articles.
1. Near-surface GaAs/Ga0.7Al0.3As quantum wells: Interaction with the surface states
2. Luminescence efficiency of near‐surface quantum wells before and after ion‐gun hydrogenation
3. Optical properties ofGa0.8In0.2As/GaAs surface quantum wells
4. Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces
5. Influence of the cap layer thickness on the optical properties of near surface GaInAs/GaAs quantum wells
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