Mode assignment of excited states in self-assembled InAs/GaAs quantum dots

Author:

Noda Susumu,Abe Tomoki,Tamura Masatoshi

Publisher

American Physical Society (APS)

Cited by 68 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Modeling of optical characteristics of near-infrared photodetectors on the basis of InAs/GaAs heterointerfaces;SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019;2019

2. Phonon Decoherence of Quantum Dots in Photonic Structures: Broadening of the Zero-Phonon Line and the Role of Dimensionality;Physical Review Letters;2018-06-21

3. Strain-Engineered Arrays of InAs Quantum Dots on GaAs(001): Epitaxial Growth and Modeling;Nanoscience and Nanotechnology Letters;2017-07-01

4. Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots;Journal of Applied Physics;2016-09-28

5. Quantum dots;Quantum Wells, Wires and Dots;2016-04-29

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