Reactive adsorption and diffusion of Ti on Si(001) by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.2380/fulltext
Reference17 articles.
1. ELS study on the initial stage of Ti-silicide formation on Si(1 1 1) at room temperature
2. Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation
3. Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system
4. Interface formation of W evaporated on Si(111) (7 × 7)
5. Chemical reaction and Schottky-barrier formation at V/Si interfaces
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