Electric field dependence of the binding energy of shallow donors in GaAs-Ga1−xAlxAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.2378/fulltext
Reference11 articles.
1. Effect of an electric field on the luminescence of GaAs quantum wells
2. Variational calculations on a quantum well in an electric field
3. Some effects of a longitudinal electric field on the photoluminescence ofp‐doped GaAs‐AlxGa1−xAs quantum well heterostructures
4. Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures
5. High‐speed optical modulation with GaAs/GaAlAs quantum wells in ap‐i‐ndiode structure
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