Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.075203/fulltext
Reference26 articles.
1. Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
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3. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
4. On the recombination behaviour of iron in moderately boron-doped p-type silicon
5. Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements
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