Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1372156
Reference21 articles.
1. A fast, preparation‐free method to detect iron in silicon
2. Iron detection in the part per quadrillion range in silicon using surface photovoltage and photodissociation of iron‐boron pairs
3. Iron and its complexes in silicon
4. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
5. Iron and the iron‐boron complex in silicon
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