Electronic and atomic structure of thinCoSi2films on Si(111) and Si(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.1193/fulltext
Reference23 articles.
1. Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devices
2. Silicon/metal silicide heterostructures grown by molecular beam epitaxy
3. Interface and surface structure of epitaxial NiSi2films
4. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
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1. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature;Technical Physics;2015-10
2. Cobalt adsorption on the bare Si(100) 2 × 1 surface at low temperature (12 K);Surface Science;2014-01
3. Photoemission study of cobalt interaction with the oxidized Si(100)2×1 surface;Surface Science;2006-06
4. Reactive epitaxy of cobalt disilicide on Si(100);Physics of the Solid State;2002-06
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