Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells-Reference-Cited by-同舟云学术

Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

Published:1993-09-15 Issue:11 Volume:48 Page:8491-8494
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hogg R. A.,Fisher T. A.,Willcox A. R. K.,Whittaker D. M.,Skolnick M. S.,Mowbray D. J.,David J. P. R.,Pabla A. S.,Rees G. J.,Grey R.,Woodhead J.,Sanchez-Rojas J. L.,Hill G.,Pate M. A.,Robson P. N.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.8491/fulltext

Reference14 articles.

1. Strain-generated electric fields in [111] growth axis strained-layer superlattices

2. Modulation of internal piezoelectric fields in strained‐layer superlattices grown along the [111] orientation

3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

4. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices

5. Optical characterizations of (111) oriented InGaAs/InAlAs strained quantum wells grown on InP substrates

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