Universality of the scaling exponents for theT=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.12434/fulltext
Reference20 articles.
1. Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures
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1. Criterion for the size of the scaling regime for the metal-insulator transition of doped semiconductors;Physical Review B;2003-05-30
2. Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals;Semiconductor Physics, Quantum Electronics and Optoelectronics;2003-03-18
3. Comment on “Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition”;Physical Review Letters;2001-08-28
4. A Nearly Universal Critical Conductivity for Semiconductor-Metal Alloys;Physical Review Letters;2000-03-27
5. Resolution of the Scaling Exponent Puzzle for Weakly Compensated Crystalline Silicon and Germanium Metal-Insulator Systems;Physical Review Letters;2000-02-14
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