Superconductor-insulator transition in fccGeSb2Te4at elevated pressures-Reference-Cited by-同舟云学术

Superconductor-insulator transition in fccGeSb2Te4at elevated pressures

Published:2018-01-23 Issue:2 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hen Bar,Layek Samar,Goldstein Moshe,Shelukhin Victor,Shulman Mark,Karpovski Michael,Greenberg Eran,Sterer Eran,Dagan Yoram,Rozenberg Gregory Kh.,Palevski Alexander

Funder

National Science Foundation

U.S. Department of Energy

Israel Science Foundation

United States - Israel Binational Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.024513/fulltext

Reference35 articles.

1. Disorder-induced localization in crystalline phase-change materials

2. Role of vacancies in metal–insulator transitions of crystalline phase-change materials

3. Direct Observation of Metal–Insulator Transition in Single-Crystalline Germanium Telluride Nanowire Memory Devices Prior to Amorphization

4. Weak antilocalization and disorder-enhanced electron interactions in annealed films of the phase-change compound GeSb2Te4

5. Breaking the Speed Limits of Phase-Change Memory

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