Theoretical study of stacking faults in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.7979/fulltext
Reference34 articles.
1. The observation of dissociated dislocations in silicon
2. The dissociation of dislocations in silicon
3. Transmission electron microscope observations of extended and unextended dislocation nodes in Si and Ge/Si layers using the weak-beam technique
4. Dissociation of near-screw dislocations in germanium and silicon
5. Lattice imaging of faulted dipoles in silicon
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