Transmission electron microscope observations of extended and unextended dislocation nodes in Si and Ge/Si layers using the weak-beam technique-Reference-Cited by-同舟云学术

Transmission electron microscope observations of extended and unextended dislocation nodes in Si and Ge/Si layers using the weak-beam technique

Published:1973-07 Issue:2 Volume:98 Page:191-195
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:

Author:

Cullis A. G.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1973.tb03822.x/fullpdf

Reference9 articles.

1. Stacking-fault energy in silicon;Aerts;J. appl. Phys.,1962

2. Observation on dislocation nodes in silicon;Booker;Phil. Mag.,1965

3. Shape of three-fold extended nodes;Brown;Discuss. Faraday Soc.,1964

4. Cullis , A.G. Booker , G.R. 1971 TEM studies of epitaxial germanium layers grown on (111) silicon substrates Proc. 25th Anniv. Meet. EMAG, Institute of Physics 320

5. Cullis , A.G. Booker , G.R. 1972 Unusual TEM contrast behaviour for crystallographic defects on going from strong to weak-beam conditions Proc. 5th Eur. Conf. Electron Microsc. 532

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