Electronic structure of Si(111)-NiSi2(111)A-type andB-type interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.5735/fulltext
Reference27 articles.
1. Electronic properties on silicon-transition metal interface compounds
2. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
3. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
4. Schottky barriers of epitaxial NiSi2on Si(111)
5. Silicide/silicon Schottky barriers under hydrostatic pressure
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers;The Journal of Physical Chemistry C;2020-08-11
2. Extending the metal-induced gap state model of Schottky barriers;Journal of Vacuum Science & Technology B;2020-07
3. Structural and electronic properties of thin fluorite-structure NiSi2, CoSi2and FeSi2interfaces and precipitates in Si;physica status solidi (a);2005-04
4. The Metal-Semiconductor Interface;Electronic Structure;2000
5. Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3