Surface states, surface potentials, and segregation at surfaces of tin-dopedIn2O3-Reference-Cited by-同舟云学术

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Surface states, surface potentials, and segregation at surfaces of tin-dopedIn2O3

Published:2006-06-09 Issue:24 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gassenbauer Y.,Schafranek R.,Klein A.,Zafeiratos S.,Hävecker M.,Knop-Gericke A.,Schlögl R.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.245312/fulltext

Reference56 articles.

1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

2. Electrical properties and defect model of tin-doped indium oxide layers

3. Neutron diffraction study on the defect structure of indium–tin–oxide

4. Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

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4. Origin and quantification of the ultimate carrier concentration limits in In2O3 and Sn-doped In2O3;Physical Review Materials;2024-04-01

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