Electronic effects on dislocation velocities in heavily doped silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.13.3548/fulltext
Reference15 articles.
1. Charged Impurity Effects on the Deformation of Dislocation-Free Germanium
2. Change of Dislocation Velocity With Fermi Level in Silicon
3. DISLOCATION ENERGY LEVEL IN SILICON FROM DISLOCATION VELOCITY MEASUREMENTS
4. Effect of Impurities on the Individual Dislocation Mobility in Silicon
5. Chemical Influence of Holes and Electrons on Dislocation Velocity in Semiconductors
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